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€5.7 Million for Exagan to go ahead with GaN-on-Si 200mm wafers

€5.7 Million for Exagan to go ahead with GaN-on-Si 200mm wafers

Business news |
By eeNews Europe



Following Exagan’s recent announcement of an agreement with X-FAB to produce devices on 200mm wafers, the financing will help support its mission of becoming Europe’s primary supplier of GaN-based power switches for the solar, automotive, IT electronics and other markets.

That mission includes its strategic partnership with CEA-Leti, which is developing applications with some of its industrial partners based on Exagan’s G-FETTM 650 V platform and its unprecedented power-switching performance with extremely low conduction losses.

Exagan, based in Grenoble with a branch office in Toulouse, was spun off by Leti and Soitec in 2014 and licenses materials and technology from both organizations.

“This significant first round of financing validates our efforts over the past five years with Leti and Soitec to commercialize GaN-on-silicon technology and supports our commitment to provide customers with qualified GaN devices in large volumes,” said Frédéric Dupont, Exagan CEO and co-founder.

“We are focused on offering our customers reliable, high-performance devices that are developed with industrial partners already sourcing technologies or products for the targeted markets.”

The investors include Technocom2, managed by Innovacom, a pioneering French venture capital firm, CM-CIC Innovation, the investment arm of the large European bank group, Crédit Mutuel-CIC Group, IRDInov, a regional seed investor in emerging, fast-growth companies, CEA investissement, a manager of funds invested in technology companies, and which invested via the CEA strategic fund, and Soitec, a world leader in providing revolutionary semiconductor materials.

Visit Exagan at www.exagan.com

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