Efficient power conversion development board for systems using eGaN FETs

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By eeNews Europe

The EPC9005 development board is a 40 V maximum device voltage, 7 A maximum output current, half bridge with on board gate drives, featuring the EPC2014 40 V eGaN FET. The purpose of this development board is to simplify the evaluation process of the EPC2014 eGaN FET by including all the critical components on a single board that can be easily connected into an existing converter.

The EPC9005 development board is 50x38mm and contains not only two EPC2014 GaN FETs in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

A Quick Start Guide is included with the EPC9005 development board for reference and ease of use.

Download all EPC eGaN datasheets

Visit Efficient Power Conversion Corporation at


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