EPC cuts on-resistance for 150, 200V GaN FETs

EPC cuts on-resistance for 150, 200V GaN FETs

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By Nick Flaherty

EPC has cut the on-resistance of its 150V and 200V gallium nitride (GaN) FETs in the same 3 mm x 5 mm footprint footprint.

The 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with an exposed top have the lowest on-resistance FETs. The new devices are footprint compatible with the previously released 100 V, 1.8 mΩ EPC2302, the 100 V, 3.8 mΩ EPC2306, and the 150V 4.9 mΩ EPC2308.

This footprint compatibility allows for optimization of performance and cost without redesigning the board.

Key metrics such as QG, QGD, QOSS are more than three times smaller than silicon MOSFETs and the reverse recovery charge (QRR), is zero. These characteristics result in switching losses that are six times smaller in both hard switching and soft switching applications. The driver losses are three times less than silicon solutions and ringing and overshoot are both significantly reduced.

The devices are aimed at smaller and lighter weight BLDC motor drives, smaller and more efficient DC-DC converters, solar optimizers and microinverters, and higher power density USB chargers and power supplies.

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