EPC expands eGaN FET family with second generation 100-V, 30-mohm power transistor
The EPC2007 FET is a 1.87 mm2, 100 VDS, 6 A device with a maximum RDS(ON) of 30 milliohms. The second generation eGaN FET provides performance advantages over the first-generation EPC1007 eGaN device. The EPC2007 is fully enhanced at a lower gate voltage and has greater immunity to fast switching transients than the predecessor.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2007 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance includehard-switched and high frequency circuitssuch as isolated DC-DC power supplies, point-of-load converters, and class D audio amplifiers.
In 1k piece quantities, the EPC2007is priced at $1.31and is immediately available through Digi-Key Corporation.
More information about the EPC2007 FET at
https://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf
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