EPC expands eGaN FET family with second generation 40-V, 16 milliohm power transistor
The EPC2014 FET is a 1.87 mm2, 40 VDS, 10 A device with a maximum RDS(ON) of 16 milliohms with 5 V applied to the gate. The eGaN FET provides performance advantages compared withthe first-generation EPC1014 eGaN device. The EPC2014 has an increase in maximum junction temperature rating to 150 degrees C and is fully enhanced at a lower gate voltage than the predecessor EPC1014.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2014 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
In 1k piece quantities, the EPC2014 is priced at $1.12 and is immediately available.
An application note detailing the performance improvements of the EPC2014 eGaN FET can be found at https://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf.
Visit Efficient Power Conversion at www.epc-co.com.
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