EPC unveils second generation 200-V eGaN power transistor

EPC unveils second generation 200-V eGaN power transistor

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By eeNews Europe

The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate.  This eGaN FET provides significant performance advantages over the first-generation EPC1010 eGaN device.  The EPC2010 has an increased pulsed current rating of 60 A (compared with 40 A for the EPC1010), improved RDS(ON) at low gate voltages, and lower capacitance.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2010 is smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance includehigh-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

A development board, the EPC9003, is available to demonstrate the performance of the EPC2010.

In 1k piece quantities, the EPC2010 is priced at $5.06and is immediately available through Digi-Key Corporation.

More information about the EPC2010 FET family

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