EpiGaN to supply OMMIC with GaN-on-Si technology

EpiGaN to supply OMMIC with GaN-on-Si technology

Technology News |
By Peter Clarke

On September 26 OMMIC inaugurated its GaN-on-Si wafer fab designed to run 150mm diameter wafers. GaN/Si epitaxial wafers will be used to make RF power products for 5G wireless communications.

OMMIC, based in Limeil-Brévannes, France, provides compound semiconductor MMICs and foundry services. The two companies will collaborate on the development of RF GaN/Si technology on 150mm diameter wafers. Advantages of EpiGaN’s GaN/Si technology include in-situ silicon-nitride passivation for enhanced device robustness and low RF losses up to 100GHz, EpiGaN claims.

“We are proud of the high-frequency capability of our material, which enables a very cost-efficient and energy-efficient GaN technology for the higher frequency bands targeted by 5G,” said Marianne Germain, CEO of EpiGaN, in a statement.

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