ESD protection diodes for USB Type-C target USB3.2 SuperSpeed

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By Nick Flaherty

The TrEOS ESD protection technology uses active silicon-controlled rectification to deliver a winning combination of extremely low capacitance (down to 0.1 pF); extremely low clamping (dynamic resistance down to 0.1 Ω) and very high robustness against surge and ESD pulses (up to 20A 8/20µs for very fast datalines). Turn-on time is also fast at about 0.5 ns and devices can withstand up to 30 kV contact discharge, exceeding IEC 61000-4-2, level 4.

TrEOS devices for applications where the protection is placed before the capacitor are now available with peak pulse current ratings of 9.5, 15 and 20 A for 8/20 IEC61000-4-5 conditions, while devices for use after the capacitor have trigger voltages (Vt1) down to 4.3 V. These features are also relevant for USB Type-A and MicroUSB interfaces.

“The options offered by USB Type-C and USB Power Delivery are very attractive: To ensure that end customers can enjoy data speeds of up to 20 Gbps and up to 100W charging, Nexperia offers two TrEOS protection families that support every protection strategy around the new USB3.2 Rx capacitor for protecting sensitive transceivers against possible fault conditions,” said Stefan Seider, product manager at Nexperia.

The TrEOS diodes are packaged in the widely-used 0603 form factor with a DSN0603-2 (SOD962-2) package that eliminates the failure mode of bond wires and results in the lowest inductance for fastest protection. This package is very popular for mobile and computing applications. Further space-saving packages are also available. 

Nexperia has provided a parametric USB protection search guide to help designers choose the optimal device for their system configuration.



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