Bridgelux, founded in 2002, developed an LED process that used GaN-on-Si on 200mm-diameter wafers and eventually transferred that process to Toshiba. Quora is now aiming to offer gallium nitride on a novel substrate technology to improve the performance and economics of GaN. Quora claims to have been validated by major GaN device manufacturers with results in LED, power and RF applications.

Basceri serves Quora as CEO and Odnoblyudov serves as chief technology officer. Basceri and Odnoblyudov have been joined in founding the company by Farhad Tabrizi, an experienced executive who was previously with Samsung Semiconductor.

Quora was founded in March 2015 shortly before it was announced it would gain exclusive licenses to a clutch of US Navy patents on the fabrication, bonding and splitting of ultra-thin semiconductor layers and now appears ready to use those patents and others to bring forward wide-band-gap foundry services.

Quora claims to have a proprietary substrate technology called QST (Quora Substrate Technology) that enables the use of 6-inch, 200mm, 300mm and larger substrates and to put down GaN in thicknesses varying from a few microns to bulk and in support of both discrete components and integrated circuits.

The process is said to be compatible with existing silicon wafer fabs and Quora discusses the existence of a foundry partner but has not disclosed the identity of that partner. The markets Quora is aiming to serve include: power electronics, LEDs, displays, and RF electronics.

Quora has announced a strategic partnership with nitride film and substrate materials company Kyma Technologies Inc. (Raleigh, NC). Kyma has expertise in GaN, AlN, Ga2O3, and diamond including free-standing GaN substrates and GaN templates.

Kyma and Quora have teamed to demonstrate that Kyma’s high growth rate GaN processes can be used to realize a low defect GaN on QST template and provides a surface ready for GaN epitaxy growth and device fabrication. 

Kyma has confirmed it can produce low defect density GaN on 6-inch diameter GaN on QST templates and with much lower bowing than for similar structures grown on sapphire. Wafer bowing, cracking and breakage are problems that afflict large diameter GaN wafers.

Related links and articles:

News articles:

Macom sues Infineon over GaN rights

GaN for power to show extended market boom

Plessey makes LEDs on 6-inch GaN-on-Si substrates

IQE, IMEC make 650V GaN-on-Si diodes on 200mm wafers

Toshiba starts GaN-on-Si LED production

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