Farnell, Transphorm announce global GaN device agreement

Farnell, Transphorm announce global GaN device agreement

Business news |
By Jean-Pierre Joosting

Farnell has announced a new global distribution partnership with Transphorm, a designer and manufacturer of highly robust high-voltage GaN (gallium nitride) semiconductors for power conversion applications.

Transphorm’s high performance, high-reliability SuperGaN® power semiconductors leverage one of the largest power GaN IP portfolios (1,000+ patents) within the widest variety of device packages. This technological expertise is harnessed in a normally-off d-mode GaN platform that delivers best-in-class robustness and reliability. End products using SuperGaN FETs gain several advantages such as higher power density and efficiency along with lower total power system cost versus alternative solutions.

Such application advantages are made possible by the SuperGaN platform’s fundamental physics. These physics drive game-changing innovations available today and slated for the future—resulting in Transphorm’s GaN being a versatile, future-proofed GaN offering.

Farnell Product Category Director – Passives & Semiconductors, Jose Lok, said, “Onboarding Transphorm as a new supplier supports our commitment to deliver high quality products to customers while giving them the ability to choose preferred manufacturers as well as the best GaN device package and performance to meet their design needs.”

Benefits of SuperGaN devices from Transphorm include:

  • Industry-leading efficiency of over 99 %;
  • Up to 50% higher power density;
  • Up to 20% lower system cost;
  • Proven robustess and reliability;
  • Drop-in and/or drive compatible with all other high voltage power technologies;
  • Support for a wide range of power applications (from 40 W to 7.5 kW, with higher power ratings coming soon).

Transphorm’s GaN innovations have led to several industry firsts, such as the 1200 V GaN-on-Sapphire device slated for commercial availability mid-2024; short-circuit withstand times of five microseconds; and a GaN four quadrant switch with true voltage and current bidirectionality control.

Jose added, “The primary advantage of SuperGaN is the use of GaN in its native d-mode form. By doing this, the 2DEG channel that is spontaneously created between the undoped GaN and AlGaN layers is left untouched. This yields a simple-to-manufacture solution that harnesses all the 2DEG’s inherent advantages, maximizing the device’s electron mobility and charge while minimizing temperature effects. The result is the highest performing offering spanning the widest power spectrum versus other Si and WBG technologies.”

“The power electronics market across all industries is radically changing as power conversion technologies like our SuperGaN platform drive major design and performance advantages,” said Vipin Bothra, VP of sales for North America and Europe at Transphorm. “Our GaN devices are currently being adopted into a global consumer, industrial and automotive markets. We feel it is critical to enable our customers to access our devices however they prefer. Partnering with well-respected global distributors like Farnell is a necessary step to meeting that objective.”

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