FemtoFET MOSFETs with lowest on-resistance target mobile applications
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By
eeNews Europe
The three N-channel and three P-channel FemtoFET MOSFETs are packaged in a land grid array (LGA) that reduces board space by up to 40 percent when compared to chip scale packaging (CSP). The CSD17381F4 and CSD25481F4 feature ultra-low on-resistance below100 milli-ohm, which is 70-percent lower than similar devices in the market today, providing power savings and longer battery life. All the FemtoFET MOSFETS provide electrostatic discharge (ESD) protection greater than 4,000 V human body model (HBM). Watch a video here.
Measuring 0.6-mm by 1.0-mm by 0.35-mm, the FemtoFET devices feature continuous drain current values ranging from 1.5 A to 3.1 A, providing more than double the performance compared to similar size devices on the market today.
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