MENU

Ferroelectric RAM chips ready up to 256kbit

Ferroelectric RAM chips ready up to 256kbit

New Products |
By eeNews Europe



Compared to other non-volatile memory as EEPROM and Flash is has the advantage of a much lower power consumption (1:400 or less), a high-speed writing (similar to DRAM) and a significant higher number of writing cycles (1012 times). Together with the data retention of 10 years these features enable engineers to use FeRAM in many applications, where a reliable storage of data is mandatory such as accounting, configuration and status information in consumer, industrial and car multimedia applications. The chips are available in 8-bit configuration and operate from a 3.3V supply in the -40 to +85°C industrial temperature range. The current line-up include 32kbit density with SPI I/F in a SOP8, 64kbit density with I2C I/F in a SOP8, 256kbit density with SPI I/F in a SOP8 and 256kbit density with parallel I/F in a TSOP28 package.

Visit ROHM Semiconductor at www.rohm.com/eu

If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News

Share:

Linked Articles
10s