Finwave announces foundry for RF GaN-on-Si
Finwave Semiconductor Inc. (Waltham, Mass.) has announced a partnership with GlobalFoundries Inc. to make RF GaN-on-Si transistors for use in smartphones. The agreement covers Finwave’s enhancement-mode MISHEMT devices.
Founded in 2012, Finwave is basing its devices on performance enhancements due to a fin structure researched at the Massachusetts Institute of Technology.
The collaboration with GlobalFoundries will focus on optimizing and scaling Finwave’s innovative enhancement-mode (E-mode) MISHEMT technology to volume production at the 200mm wafer fab in Burlington, Vermont. The technique will make use of GlobalFoundries 90RFGaN manufacturing process as the base platform.
The GaN-on-Si E-mode MISHEMT delivers excellent gain and efficiency at sub-5V voltages, while ensuring high uniformity across 200mm wafers, Finwave claims.
Finwave said the resulting technology will produce efficient power amplifiers for applications where traditional GaAs and Si technologies fall short, including 5G FR2/FR3 bands, 6G and mmWave amplifiers, and high-power Wi-Fi 7 systems, where superior range and efficiency are critical.
“This partnership opens the door to further innovation and integration of RF front-ends onto a single GaN-on-Si device,” said Pierre-Yves Lesaicherre, CEO of Finwave, in a statement.
Finwave and GlobalFoundries aim to qualify the technology for mass production in 1H26.
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