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First 1200V SiC n-channel MOSFET in TO247-4 Kelvin package

First 1200V SiC n-channel MOSFET in TO247-4 Kelvin package

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By Nick Flaherty



Diodes has launched the first n-channel silicon carbide (SiC) MOSFET in a TO247-4 package for industrial motor drives, solar inverters, data centre and telecom power supplies.

The DMWS120H100SM4 is the first SiC MOSFET on the market in a TO247-4 package says Diods, with the additional Kelvin sense pin connected to the source of the MOSFET to optimize the switching performance, enabling higher power densities. Qorvo (which bought UnitedSiC) has SiC JFETs in other types of four pin Kelvin packages, including a leadless version.

The n-channel SiC MOSFET from Diodes operates at a high voltage (1200V) and drain current (up to 37A) while maintaining low thermal conductivity (RθJC = 0.6°C/W), making it well-suited for applications running in harsh environments, including industrial DC-DC converters and electric vehicle (EV) battery chargers.

The MOSFET has a low RDS(ON) (typical) of only 80mΩ (for a 15V gate drive) to minimize conduction losses and provide higher efficiency. In addition, the device has a gate charge of only 52nC to reduce switching losses and lower the package temperature.

The DMWS120H100SM4 is available at $21.50 in 20-piece quantities.

www.diodes.com

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