First 15V trench MOSFET in a PQFN package
Infineon Technologies has launched the first 15V trench MOSFET for DC-DC conversion in servers, datacentres and AI power.
The 15 V trench power MOSFET range uses Infineon’s OptiMOS7 process for DC-DC conversions with low output voltages and the family includes a source down version in the latest PQFN 3.3 x 3.3 mm² package. There are bottom- and dual-side cooling variants in standard- and centre-gate footprints for thermal management in power supply designs for data centre and computing applications.
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The portfolio also includes a robust PQFN 2 x 2 mm² variant with a reinforced clip that provides a pulsed current capability higher than 500 A and a typical R thJC of 1.6 K/W.
Compared to the established OptiMOS5 25V parts the OptiMOS7 15V devices reduce the R DS(on) on resistance and FOMQ g by around 30 percent, and FOMQ OSS by half by lowering the breakdown voltage.
By minimizing conduction and switching losses and incorporating advanced packaging technology, thermal management becomes easy and effective, setting new benchmarks both for power density and overall efficiency.
The OptiMOS7 15V MOSFET portfolio can be ordered now and is available in two package sizes: PQFN 3.3 x 3.3 mm² Source-Down variants and PQFN 2 x 2 mm².
www.infineon.com/optimos-7-15v.
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