First 40nm embedded flash for real-time automotive applications

Technology News |
By eeNews Europe

Renesas has experience in developing high reliability MONOS (metal oxide nitride oxide silicon) flash technology and this was used in the first 90nm automotive flash MCU products in 2007. Having the flash memory blocks available at the 40nm process node is necessary for the integration of functional safety-related and communication interfaces and microcontroller cores.
Evaluation results for 40nm test devices show read capability up to a junction temperature of 170℃, a read speed of 120MHz and long data-retention period of 20 years even after 125,000 of program/erase cycles.


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