First 45nm embedded flash logic test chips sample
Samsung has used the new process for a smart card test chip to demonstrate that the process technology meets quality requirements of the security market and can be successfully deployed on a commercial scale.
“Samsung’s 45nm eFlash logic process has the potential to be broadly adopted into various components for security solutions and mobile devices, including smart card IC, NFC IC, eSE (embedded secure element) and TPM (Trusted platform module),” said Taehoon Kim, vice president of marketing, System LSI Business, Samsung Electronics. “The excellent performance from this smart card test chip will help solidify our leadership in the security IC market.”
The smart card IC based on Samsung’s 45nm eFlash logic process guarantees endurance of 1 million cycles per flash memory cell, rather than today’s benchmark rating of 500,000 cycles.
Through the improvement in both flash cell structure and operating scheme, the test chip features random access time to read memory that is 50 percent faster and the power efficiency is enhanced by 25 percent over previous products built on its 80nm eFlash logic process.
Initial smart card IC samples for commercialization using this 45nm eFlash logic technology are expected to be available in the second half of 2014.