First 96-Layer 3D Flash memory SSD
The XG6 series is available in an M.2 2280 single-sided form factor and supports PCI Express Generation 3×4 lane and NVM Express revision 1.3a. The SSD consumes 4.7W or less of power and reaches up to 3,180MB/sec of sequential read and nearly 3,000MB/sec of sequential write, and up to 355,000 random read and 365,000 random write IOPS.
Toshiba’s 3-bit-per-cell (triple-level cell, TLC) BiCS FLASH technology improves the performance, density and efficiency of SSDs. And its 96-layer stacking process combines with advanced circuit and manufacturing technology to achieve a capacity increase of approximately 40 percent per unit chip size over 64-layer 3D flash memory.