First AEC-Q101 qualified 12 V and 20 V MOSFETs in a Dual Asymmetric Package for Synchronous Buck Applications
The Vishay Siliconix SQJ202EP and SQJ200EP n-channel TrenchFET devices each combine a high- and low-side MOSFET in the compact 5 mm by 6 mm PowerPAK SO-8L dual asymmetric package, with low-side maximum on-resistance down to 3.3 mΩ.
By co-packaging two MOSFETs in an asymmetric package — with a larger low-side MOSFET for lower on-resistance and smaller high-side MOSFET for faster switching — the 12 V SQJ202EP and 20 V SQJ200EP provide high-performance alternatives to standard dual devices, which restrict the optimum combination of MOSFETs for high-current, high-frequency synchronous buck designs. Compared to using discrete components, the devices occupy less board space for more compact PCB layouts.
The devices offer high-temperature operation to +175 °C to provide the ruggedness and reliability required for automotive applications such as infotainment, telematics, navigation, and LED lighting. The 12 V SQJ202EP is aimed at applications with bus voltages under 8 V and offers extremely low maximum on-resistance down to 3.3 mΩ for the Channel 2 low-side MOSFET. For applications with higher bus voltages, the 20 V SQJ200EP features a slightly higher maximum on-resistance of 3.7 mΩ. Both parts are 100 % tested for gate resistance and avalanche, and they are RoHS-compliant and halogen-free.
Samples and production quantities of the SQJ200EP and SQJ202EP are available now, with lead times of 12 weeks for large orders.
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