First complementary vertical organic transistors reach GHz speeds

First complementary vertical organic transistors reach GHz speeds

Technology News |
By Nick Flaherty

Just as Dresden is at the heart of the complementary metal oxide semiconductor (CMOS) industry in Europe, so it is also becoming the centre for a new generation of complementary organic transistors.

A team at the Technische Universität Dresden has developed the first implementation of a complementary vertical organic transistor technology. The transistor can operate at low voltage, with adjustable inverter properties, and a fall and rise time demonstrated in inverter and ring-oscillator circuits of 11 nanoseconds

This is a key step for commercialization of efficient, flexible and printable electronics. High-frequency logic circuits, such as inverter circuits and oscillators with low power consumption and fast response time, are the essential building blocks for large-area, low power-consumption, flexible and printable electronics of the future.

The Organic Devices and Systems (ODS) group at the Institute of Applied Physics (IAP) at TU Dresden is headed by Dr Hans Kleemann. The organic permeable base transistors (OPBT) previously developed by the group have been integrated into functional circuits to show reliable performance, long-term stability and high performance.

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“In previous publications, we found that the second control-electrode in the vertical transistor architecture enables a wide-range of threshold voltage controllability, which makes such devices become ideal for efficient, fast and complex logic circuits,” said researcher Erjuan Guo. “In the recent publication, we add a vital feature to the technology by demonstrating complementary circuits such as integrated complementary inverters and ring-oscillators. Using such complementary circuits, the power- efficiency and speed of operation can be improved by more than one order of magnitude and might possibly allow organic electronics to enter the GHz-regime.”  

The complementary inverters and ring-oscillators developed at the IAP represent a milestone towards flexible, low-power GHz-electronics as it would be needed, for example in wireless communication applications. “Furthermore, our findings might inspire the entire research community to envision alternative vertical organic transistor designs as they seem to enable high-frequency operation and low-cost integrated at the same time,” said Guo.

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