First GaN FET to hit 1mΩ on-resistance

First GaN FET to hit 1mΩ on-resistance

Technology News |
By Nick Flaherty

EPC has launched a 100V gallium nitride FET with an on resistance of 1mΩ, the lowest on-resistance GaN FET on the market and twice the power density of the previous generation.

The EPC2361 GaN FET measures 3 mm x 5 mm in a QFN package for higher power density for DC-DC conversion, fast charging, motor drives for e-mobility and drones as well as solar MPPTs.

The typical RDS(on) of 1mΩ comes from the maximum RDS(on) x Area of 15 mΩ*mm2 – over five times smaller than comparable 100 V silicon MOSFETs.

This low on-resistance enables higher power density and efficiency in power conversion systems, leading to reduced energy consumption and heat dissipation.

“Our 1mΩ GaN FET continues to push the boundaries of what is possible with GaN technology, empowering our customers to create more efficient, compact, and reliable power electronics systems,” comments Alex Lidow, EPC CEO and co-founder.

The EPC90156 development board is a half bridge featuring the EPC2361 to simplify the evaluation process of power systems designers to speed their product’s time to market. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all the critical components for evaluation.

Designers interested in replacing their silicon MOSFETs with a GaN device can use the EPC Power Bench’s cross-reference tool to find a suggested replacement based on their unique operating conditions. The cross-reference tool can be found at:

The EPC2361 is priced at $4.60 each in 3 Ku volumes. The EPC90156 development board is priced at $200.00 each.

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