First industrial GAN with integrated Schottky diode
Infineon Technologies has launched what it says is the world’s first industrial gallium nitride (GaN) transistor with an integrated Schottky diode for hard-switching power applications
GaN-based designs can incur higher power losses from the larger effective body diode voltage (V SD), and this gets worse with long controller dead-times. Power design engineers often require an external Schottky diode in parallel with the GaN transistor or try to reduce dead-times through the controller.
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GaN transistor reverse conduction voltage (V RC) is dependent on the threshold voltage (V TH) and the OFF-state gate bias (V GS) due to the lack of body diode. This V TH threshold voltage is typically higher than the turn-on voltage of a silicon diode leading to a disadvantage during the reverse conduction operation, also known as third quadrant
Adding the integrated diode reduces the reverse conduction losses and boosts compatibility with a wider range of high-side gate drivers. Relaxing the deadtime also means there is more compatibility with a broader range of controllers.
All of this reduces deadtime losses, increasing the overall system efficiency as well as reducing the complexity of a power supply design and the bill of materials.
As a result the fifth generation CoolGaN e-mode normally off transistor is aimed at server and telecom power systems, DC-DC converters, synchronous rectifiers for USB-C battery chargers, high-power power supplies and motor drives. The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in 3 x 5 mm PQFN package.
Engineering samples and target datasheet are available upon request.
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