First mass-produced SiC MOS module without a Schottky diode
The power semiconductor increases the rated current to 180 A for broader applicability while contributing to lower power consumption and greater compactness.
In March of 2012 ROHM was the first supplier in the industry to mass produce 1200 V/100 A ‘Full SiC’ modules that utilize SiC for all power semiconductor elements. The goal was to balance the need for larger current handling capability with a smaller form factor for industrial equipment and other applications. Normally, increasing current rating entails integrating more MOSFET elements and similar measures. However, this requires diode rectification, which makes it difficult to reduce or even maintain device size.
In response, ROHM has successfully developed an SiC power module utilizing 2nd generation SiC MOSFET technology that minimizes conduction degradation of the body diode, eliminating the need for a diode rectification. This makes it possible to increase the mounting area for higher current handling capability while maintaining the same compact form factor.
In addition, by improving processes and device structures related to crystal defects ROHM was able to overcome all problems related to reliability, including the body diode. The result is 50% less loss compared with conventional Si IGBTs used in general-purpose inverters. This decreased loss, along with an operating frequency greater than 50 kHz, ensures compatibility with smaller peripheral components for greater end-product miniaturization.
Visit ROHM Semiconductor at www.rohm.com/eu
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