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First top-side cooled TOLT GaN FET

First top-side cooled TOLT GaN FET

New Products |
By Nick Flaherty



Transphorm has launched what is says is the first JEDEC standard top side cooled surface mount TOLT GaN FET.

With an on-resistance of 72 milliohms, the Transphorm TP65H070G4RS transistor is the industry’s first top-side cooled surface mount GaN device in the JEDEC-standard (MO-332) TOLT package.

The TOLT package offers flexibility of thermal management to customers where system requirements do not allow for the more conventional surface mount devices with bottom-side cooling. The thermal performance of the TOLT is similar to that of the widely used, thermally robust TO-247 through-hole packages and delivers the added benefit of highly efficient manufacturing processes enabled by SMD-based printed circuit board assembly (PCBA).

The TP65H070G4RS uses Transphorm’s 650V normally-off d-mode GaN platform that enables higher efficiency designs than silicon, silicon carbide, and other GaN offerings via lower gate charge, output capacitance, crossover loss, reverse recovery charge, and dynamic resistance.

The 650 V SuperGaN TOLT device is JEDEC qualified. Because the normally-off d-mode platform pairs the GaN HEMT with an integrated low voltage silicon MOSFET, the SuperGaN FETs are easy to drive with commonly used off-the-shelf gate drivers. They can be used in various hard- and soft-switching AC-to-DC, DC-to-DC, and DC-to-AC topologies to increase power density while reducing system size, weight, and overall cost

The SuperGaN platform advantages combined with the TOLT’s better thermals and system assembly flexibility results in a high performance, high reliability GaN solution for customers seeking to bring to market power systems with higher power density and efficiency at an overall lower power system cost. The gate safety region is ± 20 V with a temperature coefficient of resistance (TCR) at 20% lower than e-mode normally-off GaN.

Transphorm says it is working with multiple global partners for high power GaN, including lead customers in server and storage power, a global leader in the energy/microinverter space, an innovative manufacturer of off-grid power solutions, and a leader in satellite communications.

“Surface mount devices such as the TOLL and the TOLT offer various benefits such as lower internal inductance as well as simpler board mounting during manufacturing. The TOLT adds to that more flexible overall thermal management with through-hole like thermal performance by using top-side cooling,” said Philip Zuk, SVP Business Development and Marketing, Transphorm. “These devices are commonly found in mid to high power system applications for key market segments including high performance computing (Server, Telecom, AI Power), Renewables and Industrial, and Electric Vehicles, some of which our GaN technology already powers today. we’re very excited to enable our customers to realize additional system level benefits with TOLT SuperGaN solutions.”

This follows the recent introduction of its three new TOLL FETs.

Part

Dimensions (mm)

RDS(on) (mΩ) typ

RDS(on) (mΩ) max

Vth (V) typ

Id (25°C) (A) max

TP65H070G4RS

10 x 15

72

85

4

29

The TP65H070G4RS SuperGaN TOLT device is currently available to sample. To receive product, submit a request at https://www.transphormusa.com/en/products/.

 

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