Four lead 1200V SiC MOSFETs for electric vehicle applications
Alpha and Omega Semiconductor (AOS) has launched its second generation 1200V silicon carbide (SiC) aSiC MOSFET in optimized four lead TO-247-4L packages.
The parts are AEC-Q101 qualified for electric vehicle (EV) on-board chargers, motor drive inverters, and off-board charging stations using a standard 15V gate drive. The devices support a maximum operating junction temperature up to 175°C.
As the EV market accelerates into millions of units per year, vehicle manufacturers are increasingly implementing 800V electrical systems to reduce the system’s size and weight while increasing range and enabling significantly faster charging speeds.
The AOM033V120X2Q is a 1200V / 33mW SiC MOSFET based on the AOS second generation aSiC MOSFET platform packaged in an optimized four lead Kelvin TO-247-4L package. Unlike the standard three lead package, using an additional sense lead reduces the package inductance effects and enables the device to operate at a higher switching frequency with up to 75 percent reduction in switching losses compared to standard packaging.
The recommended gate driving voltage of 15V allows for the widest compatibility of gate drivers for ease of adoption in a variety of system designs. In addition, aSiC MOSFETs have a very low increase in on-resistance up to the rated 175° C to minimize power losses and further increase efficiency.
“For the continued transformation of transportation to EV technology, vehicle manufacturers making efforts to increase range and reduce the time spent charging. With our release of these automotive qualified 1200V aSiC MOSFETs, AOS can provide designers with next generation semiconductor technology to increase these efficiency targets. Our customers have selected our technology due to the combination of product performance, reliability, and volume capable supply chain,” said David Sheridan, Sr. Director of Wide Bandgap Products at AOS.
The AOM033V120X2Q is immediately available for production quantities.
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