Four lead Kelvin package for SiC drop in devices

Four lead Kelvin package for SiC drop in devices

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By Nick Flaherty

The UF3C120150K4S has a typical on-resistance (RDS(on)) of 150 mΩ, bringing the total number of 4-leaded FAST Series devices up to six and extending the on-resistance range of the entire series from 30 mΩ all the way up to 150 mΩ.  

With a maximum operating temperature of 175°C, the UF3C120150K4S offers good reverse recovery, low gate charge and low intrinsic capacitance. The ESD protected, HBM class 2 TO-247-4L package offers faster switching and much cleaner gate waveforms compared to a standard 3-leaded TO-247. The 4-pin Kelvin package avoids gate ringing and false triggering which would normally require switching speeds to be limited to manage the large common source inductance of 3-leaded packages. This device is suitable for EV charging, photovoltaic inverters, switch mode power supplies, power factor correction (PFC) modules, motor drives and induction heating.

The UF3C FAST SiC series now totals 13 devices and is available in TO-247-3L and TO-247-4L packages with 1200V and 650V options. The range offers very fast switching, high-power devices in a package capable of high-power dissipation based on its efficient “cascode” configuration. The 4-terminal Kelvin package offers easy screw or clamp mounting with very low junction-to-case thermal resistance, taking advantage of the high junction temperature capabilities of SiC.

The UJ3C and UF3C SiC FET devices are a true “drop-in replacement” for silicon IGBTs, FETs, MOSFETs or superjunction devices without the need to change gate drive voltage.

The UF3C120150K4S is priced at $6.14 for 1,000 pcs quantities. Stock is available at Mouser and other local distributors.  

Please visit for datasheets and for a SiC FET User Guide highlighting practical solutions and guidelines for using RC snubbers with fast switching SiC devices.

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