Fourth generation 1200V SiC FET for 800V designs

Fourth generation 1200V SiC FET for 800V designs

New Products |
By Nick Flaherty

Qorvo has launched the fourth generation of 1200V Silicon Carbide (SiC) hybrid Field Effect Transistors following its acquisition of UnitedSiC last year.

The UF4C/SC series of 1200V hybrid FETs are aimed at 800V bus architectures in onboard chargers for electric vehicles as well as industrial battery chargers, industrial power supplies, DC-DC solar inverters, welding machines, uninterruptible power supplies and induction heating applications.

The devices have on resistance RDS(on) of 23, 30, 53 and 70 milliohm and are offered in the industry standard 4-lead kelvin source TO-247 package, providing cleaner switching at higher performance levels. The 53 and 70 milliohm devices are also available in the TO-247 3-lead package. Qorvo uses a wafer-thinning process for the die and silver-sinter die attach in the package to improve the thermal performance and boost reliability.

“Expanding our 1200V range with higher performance Gen4 options allows us to better serve the engineers who are moving their bus designs to 800V,” said Anup Bhalla, Chief Engineer – Power Devices, UnitedSiC/Qorvo. “In electric vehicles, this move to higher voltages is inevitable and these new devices, with four different RDS(on) classes, help designers select the best possible SiC choice for every design.”

All 1200V SiC FETs are included in FET-Jet Calculator, a free online design tool that allows for instant evaluation of efficiency, component losses, and junction temperature rise of devices used in a wide variety of AC-DC and isolated/non-isolated DC-DC converter topologies. Single and paralleled devices may be compared under user-specified heat-sinking conditions to enable optimum solutions.

Pricing (1000-up, FOB USA) ranges from $5.71 for the UF4C120070K3S, to $14.14 for the UF4SC120023K4S. All devices are available from authorized distributors.

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