Fraunhofer teams for 300mm ferroelectric memory AI devices
Fraunhofer IPMS continues to build its position in ferroelectric memory device technology with a Joint Development Agreement (JDA) with NY Creates in Albany, New York, to drive research and development on 300mm wafers.
Ferroelectric memories are seen as the next generation of non-volatile devices that scale beyond flash memories, which are limited to process technologies above 16nm and so do not take advantage of the higher volumes of 300mm wafers. These memories are also a key technology for AI processors using in memory compute architectures.
“With the Centre for Nanoelectronic Technologies (CNT), Fraunhofer IPMS maintains a leading international competence center for the development of ferroelectric memories based on hafnium oxide (HfO₂). These memory technologies are particularly promising for neuromorphic computing applications as they are very energy efficient, CMOS compatible and scalable down to very small technology nodes. We look forward to working with NY CREATES to develop new promising memory designs based on the expertise of both parties,” said Dr. Wenke Weinreich, Deputy Director of Fraunhofer IPMS.
“As we build upon the strong connections, we have with semiconductor R&D centres around the globe to create the technologies that the U.S. and the world will rely on in the future, we look forward to this collaboration with Fraunhofer IPMS to further develop next-generation ferroelectric memory devices at the 300mm scale,” said Dave Anderson, President of NY Creates.
The Albany NanoTech Complex was designated as the location of the flagship National Semiconductor Technology Centre facility, the CHIPS for America EUV Accelerator. The EUV Accelerator is expected to drive significant R&D based on Extreme Ultraviolet (EUV) lithography.
www.ipms.fraunhofer.de; www.ny-creates.org
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