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Full SiC module reduces switching loss in high-power applications

Full SiC module reduces switching loss in high-power applications

New Products |
By Christoph Hammerschmidt



The new module implements MOSFETs with their advanced UMOS structure going without JFET region and maximizing SiC characteristics. It provides the lowest drain source resistance together with high speed switching performance, and – thanks to the extremely low Vf and the fast recovery performance of the built-in SiC-SBDs – it has almost no recovery loss Err.

 

As a result, the module achieves 77% lower switching loss than conventional IGBT modules and 42% lower Switching loss than planar SiC Modules utilizing a 2nd Gen SiC-DMOS structure. This not only enables high-frequency operation but also contributes to smaller cooling systems as well as smaller peripheral components which in consequence paves the way to greater energy savings and end-product miniaturization.

 

For further information please contact www.rohm.com/eu

 

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