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Gallium nitride half bridge drops 12V to 1.8V at >85%, 5 MHz & 14A

Gallium nitride half bridge drops 12V to 1.8V at >85%, 5 MHz & 14A

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By Graham Prophet



This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2111 is intended for high frequency 12V to point-of-load DC-DC conversion.

 

Each device (FET) within the EPC2111 half-bridge component has a voltage rating of 30V. The upper FET has a typical RDS(on) of 14 mOhm, and the lower FET has a typical RDS(on) of 6 mOhm. The EPC2111 comes in a chip-scale package for improved switching speed and thermal performance, measuring 3.5 x 1.5 mm for increased power density.

A primary application for this device is for notebook and tablet computing. The power conversion circuitry in these systems occupy nearly half of the space and define the height of the motherboard. The high frequency capability of GaN reduces the size required for power conversion and thus will drive significant size reductions of next generation mobile computing.

 

The EPC2111 monolithic half-bridge is priced at $1.62 (1000) and can be found at distributor Digi-Key; www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

 

EPC; www.epc-co.com

 

 

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