Gallium-nitride-on-silicon white LEDs deliver more light
The TL1L4 series achieves high luminous flux that surpasses 160 lm at room temperature operation. Under conditions of Ta = 85℃, operating current can be driven to 1A and luminous flux is more than 60% greater than that offered by the preceding TL1L3 series. This contributes to improved luminous efficacy and lower power consumption for LED applications.
Available in nine colour variations from 2700K to 6500K, the TL1L4 series is built with gallium nitride-on-silicon (GaN-on-Si) wafer technology to create LEDs optimised for both output and energy efficiency.
The devices are housed in a 3.5 x 3.5 mm lens package and rated to support an absolute maximum forward current of 1.5A max at Ta<55℃ and Tj<150℃. Hot binning tests for electrical and optical characteristics are conducted at 85℃ and IF=350mA that simulate real-life operating conditions.
Toshiba Electronics Europe; www.toshiba.semicon-storage.com
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