GaN 50-V transistors target wideband applications
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By
Jean-Pierre Joosting
Enabling engineerrs to deliver higher performance while managing size, cost and power, this family of 50-V GaN transistors offers significant operational and system cost savings from greater system-level efficiency. The small device size and higher impedance input/output leads help optimize board designs for radar, communications, avionics, wideband amplifiers and test instrumentation.
The QPD1009 and QPD1010 are now available in low-cost 3- x 3-mm plastic QFN packages, while the QPD1008(L) and QPD1015(L) are now available in industry standard, thermally enhanced NI-360 air cavity ceramic packages, in eared and earless versions. This family of GaN transistors operates from 10 W up to 125 W power levels.
| Product | Psat (W) | Frequency (GHz) | Output Power (P3dB) | PAE (%) | SS Gain (dB) | Packaging |
|---|---|---|---|---|---|---|
| QPD1009 | 15 | DC-4 | 42 | 72 | 24 | 3×3 QFN |
| QPD1010 | 10 | DC-4 | 40 | 70 | 25 | 3×3 QFN |
| QPD1008 | 125 | DC-3.2 | 51 | 70 | 18 | Earless NI-360 |
| QPD1008L | 125 | DC-3.2 | 51 | 70 | 18 | Eared NI-360 |
| QPD1015 | 65 | DC-3.7 | 48 | 70 | 20 | Earless NI-360 |
| QPD1015L | 65 | DC-3.7 | 48 | 70 | 20 | Eared NI-360 |
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