GaN amplifier offers best in class thermal resistance
The device is housed in an industry-standard 6 mm by 5 mm DFN plastic package.
The NPA1006 is the latest addition to Nitronex’s integrated amplifier family that offers low cost, high performance GaN devices in industry standard surface mount, plastic packages. The thermal resistance of the NPA1006 is 4.6°C/W, representing best in class for this power level. The amplifier input is internally matched to 50 Ohms for easy integration and the output needs only a simple two element external match for full band coverage. The NPA1006 utilizes Nitronex’s 28 V NRF1 GaN HEMT process, which has been in production since 2006.
Nitronex’s patented SIGANTIC GaN-on-Si process claims to be the only production-qualified GaN process using an industry standard 4-inch silicon substrate.
NPA1006 amplifier samples and evaluation boards are available now.
Visit Nitronex at www.nitronex.com