
GaN-based 48V to 12V regulated power supply dev board
New Products
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By
eeNews Europe
The EPC9130 provides extremely high-power density exceeding 1250 W per cubic inch, and over 96% efficiency. Each of the five phases uses two 100V EPC2045 eGaN FETs in a half-bridge configuration with a uPI Semiconductor, up1966A gate driver. The PWM signals to the gate drivers are fed by an onboard dsPIC33 microcontroller from Microchip. The board contains all critical components and layout for optimal switching performance – with a bill of materials of less than $0.06 per Watt in volume.
Efficient Power Conversion – www.epc-co.com
