The GS61008P-EVBHF board combines the E-Mode GaN transistor with pSemi’s PE29101 integrated high-speed driver that provide switching transition speeds in the sub nano-second range.
This allows designers to benefit from higher switching speeds, enabling smaller peripheral components in a variety of applications including DC-DC converters, AC-DC converters, wireless power charging and LiDAR laser detection systems in automotive and robotics designs.
GaN E-HEMTs exhibit much higher efficiencies than MOSFETs and exceeds performance in terms of switching speed, parasitic capacitance, switching loss, and thermal characteristics. The higher speed of the specialist UltraCMOS driver from pSemi, formerly Peregrine Semiconductor, allows smaller magnetics to be used to reduce the footprint and cost of a power design and provide higher efficinecy with lower energy losses.
“Working with pSemi, we’ve been able bring the faster switching, higher frequencies, and higher power density solutions to customers so they can leverage the numerous and irrefutable benefits of our industry leading GaN E-HEMTs,” said Peter Di Maso, Director, Product Line Management at GaN Systems. “These benefits come together to reduce power losses, size, weight, and system costs.”