GaN design hits 5130 W/in3 for AI
EPC has developed a reference design for a 48V LLC converter with a power density of 5130 W/in3.
The EPC9159 is aimed at high-density 48 V server power and DC-DC converters and delivers 1 kW of power in a 17.5 mm x 22.8 mm footprint with gallium nitride (GaN) transistors at high switching frequencies in both the primary and secondary circuits.
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The power supply topology used in the design of the EPC9159 is based on the LLC topology. The implemented LLC consists of a primary side full bridge, a fixed ratio planar transformer, and a centre tab synchronous rectifier for the secondary side. The primary full bridge uses four EPC2619, 80 V-rated 3.3 mΩ GaN transistors, and the secondary uses six EPC2067, 40 V-rated 1.3 mΩ GaN transistors.
The EPC9159 achieves a power stage efficiency of 98% at 25 A and a full-load efficiency of 96.2% at 83 A into 12 V using the GaN transistors. This design is suitable for high-density computing applications such as artificial intelligence and advanced gaming.
“eGaN FETs and ICs provide the fast switching, small size, and high efficiency needed to provide the highest power density solutions for advanced computing applications,” said Alex Lidow, CEO of EPC. “The EPC9159 is the ideal solution to address the growing power needs of artificial intelligence and to support the transition to 48 V input for the new high density and high efficiency servers required for these advanced computing applications.”
The EPC9159 evaluation board is priced at $787.80/each and is available for immediate delivery from DigiKey.
www.digikey.com/en/supplier-centers/epc
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