GaN FET driver  for high-frequency applications

GaN FET driver for high-frequency applications

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By Wisse Hettinga

Part of an industry-leading gallium nitride (GaN) power portfolio family from TI, the LMG1210 GaN FET driver enables higher efficiency, increased power density, and lower overall system size over traditional silicon-based alternatives, and are optimized specifically for speed-critical power-conversion applications.

The TI LMG1210, available from Mouser Electronics, is a 50-MHz half-bridge driver designed to work with enhancement mode GaN FETs up to 200 V. Engineered for maximum performance and highly efficient operation, the LMG1210 features an ultra-fast propagation delay of 10 ns, which is faster than traditional silicon half-bridge drivers. The device also provides a low switch-node capacitance of 1 pF with user-adjustable dead time control which helps improve efficiency by allowing designers to optimize dead-time within their system.

The LMG1210 offers 3.4-ns high-side–to–low-side delay matching, a minimum pulse width of 4 ns, and an internal LDO that ensures a gate-drive voltage of 5 V regardless of supply voltage. The driver also includes a common-mode transient immunity (CMTI) of more than 300 V/ns — one of the industry’s highest — which enables high system-noise immunity.

The LMG1210 driver is ideal for a broad range of applications, including high-speed DC/DC converters, motor control, Class-D audio amplifiers, Class-E wireless charging, RF envelope tracking, and other power-conversion applications.

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