GaN FET maker EPC signs Ismosys to increase European presence

GaN FET maker EPC signs Ismosys to increase European presence

Business news |
By Nick Flaherty

Nigel Watts, Managing Director of Ismosys, comments, “Our new partnership with EPC is an exciting addition to our portfolio and will allow us to bring leading edge power solutions to Europe. Gallium nitride technologies are an exciting innovation and will enable the design houses we are partnered with and the wider European design community to embrace GaN and produce really exciting, high performance designs.” Ismosys, founded in 1994, operates 10 regional offices covering the entire EMEA plus a significant centralized resource for technical support.

EPC produces enhancement-mode gallium nitride based power management devices, with the claim to have been first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements. Applications include such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.



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