GaN FETs in copper clip SMD packaging for industrial and renewable energy applications

GaN FETs in copper clip SMD packaging for industrial and renewable energy applications

New Products |
By Nick Flaherty

Nexperia is combining the benefits of copper-clip packaging and gallium nitride GaN wide bandgap transistors semiconductors for industrial designs.

The latest high-voltage cascode GaN HEMT devices from Nexperia are using the company’s proprietary copper-clip CCPAK surface mount packaging.

The copper clip packaging gives the 650V GAN039-650NTB GaN HEMT transistor  a 33 mΩ (typ.) on resistance within the CCPAK1212i top-side cooling package. This offers advantages for renewable energy applications such as solar and residential heat pumps, as well as industrial applications such as servo drives, switched-mode power supplies (SMPS), servers and telecom.

The CCPAK surface mount packaging uses a copper-clip to replace internal bond wires, reducing parasitic losses, optimizing electrical and thermal performance and improving device reliability. The CCPAK GaN FETs are available in top- or bottom-cooled configurations to further improve heat dissipation.

The cascode configuration of the GAN039-650NTB enables a robust gate with high margins against noise. This feature also simplifies application designs by eliminating the requirement for complex gate drivers and control circuitry, instead allowing them to be conveniently driven using standard silicon MOSFET drivers.

“Nexperia recognizes that designers of industrial and renewable energy equipment need a highly robust switching solution that can provide excellent thermal efficiency when performing power conversion,” said Carlos Castro, Vice President, and General Manager of the GaN FET business at Nexperia. “This is why Nexperia decided to bring together the exceptional switching performance of its cascode GaN FETs with the exceptional thermal properties of its CCPAK packaging to offer customers a compelling solution.”

Nexperia begins its CCPAK portfolio release with the top-cooled 33 mΩ (typ.), 650 V GAN039-650NTB, and will follow shortly with the bottom-cooled variant, GAN039-650NBB of the same RDS(on).


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