GaN Ku-band PA and integrated broadband amplifier
The 25W TGA2579-FL power amplifier is placed in a ground-signal ground (GSG) package so it can be mounted on the top or underside of multi-layer circuit boards, giving designers the greatest possible flexibility. It provides 25 W of output power with 30% power added efficiency. The device’s high gain and extremely wide operating bandwidth (4-20 GHz) provides broad versatility. It integrates limiting and LNA functions in a single package. Robust protection of sensitive receiver circuits and low-noise amplification are achieved in less space with fewer devices. Its hermetically-sealed, surface mount package meets MIL-STD 883H TM 1014.13 condition, A1/C1.
TriQuint’s Near Junction Thermal Transport (NJTT) GaN program was honored in March with a 2013 CS Industry Award. The NJTT initiative has produced the industry’s first GaN-on-diamond HEMT transistors that significantly reduce heat while maintaining RF performance. TriQuint innovation can enable RF devices up to three times smaller than those currently available. This award is the company’s third consecutive honor for gallium nitride research from international semiconductor industry leaders.
The TGA2579-FL 13.75 to 15.35 GHz (Ku-band) GaN RF power amplifier delivers 25 W (+44 dBm) saturated output power; +48 dBm Output Third Order Intercept Point (OIP3); 32 dB small-signal gain; 30 % power-added efficiency; ground-signal-ground RF transitions for interfacing with coplanar waveguide circuit boards; 25-V/1-A DC bias, 14-pin SMT package.
The TGM2543-SM is a 4 to 20 GHz integrated limiter/LNA with RF input limiting of 4 W CW (+36 dBm). It offers +17 dBm mid-band gain; 2 dB noise figure; +28 dBm (OIP3); adjustable gain control; 5-V/100-mA DC bias; and comes in an hermetically-sealed 22-lead 7x7mm ceramic QFN package (meets MIL-STD 883H TM 1014.3 Condition A1/C1).
Both the TGA2579-FL and TGM2543-SM are in production and samples and evaluation boards are available.
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