GaN MMIC amplifier and GaN power transistor pack more power
The latest family of 25-VDC GaN MMIC power amplifiers are ideal for use in Mini-Common Data Links (Mini-CDLs) as well as similar defense and general communications applications. They are housed in flange mount packages and combine high RF power output and efficiency with excellent thermal management characteristics.
The TGA2593-GSG operates from 13-15 GHz and delivers saturated (Psat) RF power output of 20 W; efficiency is 25% and it provides 19 dB of gain for VSAT and similar applications. The TGA2572-FL operates from 14 -16 GHz with 16 W Psat RF output power; efficiency is greater than 25%, large signal gain is 18 dB, and small signal gain is 23 dB. The TGA2579-FL operates from 14-15.5 GHz; it delivers 20 W of Psat RF power with 30% efficiency, 23 dB of large signal gain and 28 dB of small signal gain. All three devices operate from a 25 V supply.
The T1G6003028-FS 28-V GaN RF power transistor is an ideal choice as a driver or final stage amplifier in defense and civilian radar, professional and military radio communications systems, test equipment, jammers and general-purpose wideband or narrowband amplifiers. It is offered in an earless ceramic package and delivers more than 30 W RF output power from DC to 6 GHz with drain efficiency of 50% and gain of 11.5 dB, 3 dB higher than its nearest competitor. Power, gain and efficiency of the T1G6003028-FS can be optimized with simple external matching networks.
All four devices are constructed using TriQuint’s proven 0.25-µm GaN on SiC production process.
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