GaN-on-Si high power white LEDs step up light output
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By
eeNews Europe
GaN-on-Si technology has been applied to create LEDs optimised for both output and energy efficiency. The 4A5B type improves upon existing products by providing a luminous flux of 140 lm at current of 350mA, and Tj=85°C, compared to 130 lm. They make it possible to meet the market demands for improved lighting fixture efficacy by achieving efficacies of over 110 lm/W.
Measuring 3.5 x 3.5mm, with a lens-top, the new LEDs offer differing levels of correlated colour temperature (CCT), with the TL1L4-DW0 providing 6500K, the TL1L4-NT0 providing 5700K, the TL1L4-NW0 5000K and the TL1L4-WH0 4000K. All offer a colour rendering index of Ra70 min. and a typ. forward voltage of 2.8V.
Toshiba Electronics Europe; www.toshiba.semicon-storage.com
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