GaN-on-Si LEDs provide high luminous flux for less power

GaN-on-Si LEDs provide high luminous flux for less power

New Products |
By eeNews Europe

Like the existing members of the TL1L4 series, GaN-on-Si  technology has been utilized to create LEDs optimised for both output and energy efficiency. However, the new 4A5B type improves upon these existing products by providing a luminous flux of 140 lm (min.), compared to 130 lm (min.). The new products make it possible to meet the market demands for improved lighting fixture efficacy by achieving efficacies of over 110 lm/W. The LEDs can also contribute to reducing the power consumed by LED lighting.

Measuring 3.5 mm x 3.5 mm, with a lens-top, the new LEDs offer differing levels of correlated colour temperature (CCT), with the TL1L4-DW0 providing 6500K, the TL1L4-NT0 providing 5700K, the TL1L4-NW0 5000K and the TL1L4-WH0 4000K. All offer a colour rendering index of Ra70 min. and a typ. forward voltage of 2.8 V.

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