GaN-on-Si microLED wafer successfully bonded to a CMOS backplane

Technology News |
By eeNews Europe

Wafer level bonding poses significant technical challenges and had not previously been achieved between a GaN-on-Silicon microLED wafers and a high-density CMOS backplanes, claims Plessey who says it achieved the world’s first mechanically successful wafer to wafer bond in early April 2019. This follows a continued partnership with JDC including an extensive capital investment in a complete tool set, enabling successful wafer to wafer bonding.

This new milestone lead to a fully functional, electrical and mechanical bond, resulting in a fully operational microLED display. The display features an array of 1920×1080 (FHD) current-driven monochrome pixels on a pitch of 8 microns. Each display requires more than two million individual electrical bonds to connect the microLED pixels to the controlling backplane. The JDC backplane provides independent 10-bit single colour control of each pixel – Bonding a complete LED wafer to a CMOS backplane wafer, incorporates over 100 million micro level bonds between the wafers.

“This is a momentous milestone in the development of our monolithic microLED display technology. To the best of our knowledge this is truly a world first and we are extremely proud of this tremendous achievement. This is what the industry has been waiting for and opens up a new market for microLED emissive display applications”, expressed Dr Wei Sin Tan, Director of Epitaxy and Advanced Product Development at Plessey.

Jasper Display –

Plessey –

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