GaN on SiC RF input-matched transistors

GaN on SiC RF input-matched transistors

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By eeNews Europe

The 5-W TGF3020-SM and 30-W TGF3021-SM input-matched transistors enable high linear gain and power efficiency in low-cost, space-saving surface-mount plastic QFN packages. The integrated input matching network enables wideband gain and power performance, and the output can be matched on-board to optimize power and efficiency for any region within the band.

The TGF3020-SM covers 4.0 to 6.0 GHz with P3dB output power of 6.8 W at 5 GHz, PAE of 59% and linear gain of 12.7 dB at 5 GHz. The TGF3021-SM covers 0.03 to 4.0 GHz and delivers a P3dB output power of 36.0W at 2 GHz with 72% PAE and linear gain of 19.3dB at 2 GHz.

“The plastic packaging means greater power efficiency,” commented Mark Vitellaro, Director of Strategic Marketing, Richardson RFPD. “And the ability to optimize power and efficiency within the band enables flexible, scalable GaN solutions with simplified board designs.”

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