GaN on SiC RF power transistors complement LDMOS

GaN on SiC RF power transistors complement LDMOS

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By Jean-Pierre Joosting

The GaN on SiC RF power transistors enabe high-power multiband applications while offering a size reduction in the order of 30 to 50 percent, when compared to similar LDMOS transistors. PA designers can now more easily find the perfect fit for each particular set of requirements, be it efficiency, size, power and cost.

The latest portfolio will include transistors with 15 to 600-W of peak power for all major cellular bands between 1.8 and 3.8 GHz.

The CLF2H27LS-140 is a single-ended transistor providing 140-W of peak power in band 41. Other devices currently sampling include the CLF2H1822LS-160 and CLF2H1822LS-220 suitable for 1.8 to 2.2 GHz multiband applications, and the CLF2H38LS-140 and CLF2H38LS-40 (driver) for 3.4 to 3.8 GHz applications with 140- and 40-W outputs at P3dB.

The family is ideal for RF PA designers developing high efficiency or multiband Doherty power amplifiers for use in wireless infrastructure networks.

Comprehensive application support, including ready-to-go Doherty reference designs optimized for mass-production, is available.

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