GaN power amplifier oprates in the 2- to 6-GHz band
The PE15A5025 delivers high levels of output power and efficiency and has the advantage of high output load impedance that makes port matching easier over wider bandwidths using lower loss components. Applications for the amplifier include commercial and military radar, jamming systems, medical imaging, wireless communications and electronic warfare.
This GaN power amplifier offers 50 dB of small signal gain with a saturated output power level of +47 dBm typical and 30% power added efficiency (PAE). While generating 50-W of saturated output power under worst case conditions, the output harmonic response is -15 dBc and spurious levels are kept at -70 dBc. The amplifier requires a +28 Vdc power supply and is unconditionally stable. Other desired features include integrated voltage regulation, bias sequencing circuitry, DC control TTL logic, DC current monitoring, and over temperature shutdown at +90°C baseplate temperature for added reliability.
The PE15A5025 amplifier uses female SMA input/output RF connectors and a 15 Pin Micro-D Female socket is used for DC, TTL blanking, and over current and temperature monitoring. The assembly operates over the temperature range of -40°C and +85°C and the rugged package is designed to withstand harsh military standard environmental test conditions that include humidity, altitude, shock and vibration. An external heatsink with fan for cooling is recommended.
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