GaN power devices shown in applications
These short videos present end-customer applications using the company’s eGaN FETs and Ics and, the company says, challenge power systems design engineers to incorporate the high performance of gallium nitride FETs and ICs into their next generation power system designs.
The application demonstration videos posted are:
1. APEC 2017: Applications for GaN
At APEC 2017 EPC showcased more than 25 applications. Alex Lidow, CEO, shows eGaN FETs and ICs in a wide range of applications including a 2 x 3 ft. tabletop wirelessly powering multiple devices simultaneously.
2. GaN-Based Wirelessly Powered Tabletop
In this home application, EPC demonstrates a wireless power tabletop simultaneously powering a laptop, a video monitor, Google Home, Amazon Alexa, a desk lamp, and a cell phone.
eGaN FETs and ICs switch ten times faster than silicon power MOSFET, says EPC. This high speed gives LiDAR (Light Distancing and Ranging) systems superior resolution, faster response time, and greater accuracy.
4. 48 V – 1.8 V DC-DC Conversion Gen 5 GaN FET vs. MOSFET
This video shows a side-by-side comparison of a 100V GaN FET outperforming a comparable MOSFET in a much smaller footprint with 30% less power loss and 3X the power density.
5. 150 V – 12 V DC-DC Conversion Gen 5 GaN FET vs. MOSFET
This video shows a side-by-side comparison of a 200 V GaN FET outperforming a comparable MOSFET in a much smaller footprint – 15X smaller – with 40% less power loss and 3X the power density.
In this video is an example of a 48 V, 10 A 3-phase GaN Inverter reference design from Texas Instruments using the LMG5200. The GaN solution has better thermal profiles where heat sinks can be eliminated and the lower inductance reduces size and weight. This reference design has an efficiency rating of 98.5%!
EPC: www.epc-co.com
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