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GaN power supply dev board delivers over 1.2MW/in

GaN power supply dev board delivers over 1.2MW/in

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By Nick Flaherty



The EPC9130 development board has five phases, each using two 100 V EPC2045 eGaN FETs in a half-bridge configuration with a uPI Semiconductor up1966A gate driver. The PWM signals to the gate drivers are fed by an onboard dsPIC33 microcontroller from Microchip. The board contains all critical components and layout for optimal switching performance – with a bill of materials of less than $0.06 per Watt in volume.

Emerging computing applications demand more power in much smaller form factors. In addition to the expanding needs of the server market, some of the most challenging applications are multi-user gaming systems, autonomous cars, artificial intelligence, and cryptocurrency mining. With an efficiency over 96%, the EPC9130 significantly improves the power density while reducing the size and cost of the 48 V to 12 V DC-DC converters needed for these applications.

“This DC-DC system has a power density greater than 1250 W per cubic inch and an efficiency greater than 96%, both records for this type of conversion. What really makes this solution compelling is that the cost of the components is less than $0.06 per watt, significantly lower than systems in production today,” said Alex Lidow, CEO and co-founder of EPC.

EPC9130 development boards are priced at $468.00 each and are available for immediate delivery from Digi-Key.

www.epc-co.com

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