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GaN power transistor fits into 5.0 x 6.5-mm footprint

GaN power transistor fits into 5.0 x 6.5-mm footprint

New Products |
By eeNews Europe



The GS66504B is one of a family of 650 V devices that spans a range of 7 A to 200 A.

GaN Systems claims to be the first company to have developed and brought a comprehensive product range of devices with current ratings from 7 A to 250 A to the global market – the company’s Island Technology die design, combined with its low inductance and thermally efficient GaNPX packaging and Drive Assist technology means the company’s GaN transistors offer a 40-fold improvement in switching and conduction performance over traditional silicon MOSFETs and IGBTs.  Devices are available now through the company’s worldwide distribution network.

www.gansystems.com

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